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Habilitation Thesis
DOI
https://doi.org/10.11606/T.3.2003.tde-11042022-071803
Document
Author
Full name
Silvio Ikuyo Nabeta
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 2003
Committee
Cardoso, Jose Roberto (President)
Jacobina, Cursino Brandão
Sadowski, Nelson
Sales, Roberto Moura
Watanabe, Edson Hirokazu
Title in Portuguese
Acoplamento indireto de semicondutores ao método dos elementos finitos.
Keywords in Portuguese
Circuitos elétricos
Método dos elementos finitos
Semicondutores
Abstract in Portuguese
Este trabalho apresenta a técnica do Acoplamento Indireto do modelo não-linear de um diodo ao Método dos Elementos Finitos. Dois métodos serão abordados: 1. o diodo será modelado por uma equação não-linear e acoplado indiretamente ao programa de elementos finitos em eletromagnetismo Olympos através do Matlab; 2. o circuito contendo o semicondutor é descrito pelo programa de análise de circuitos HSpice e este é acoplado de modo indireto ao Olympos, com gerenciamento do Matlab. Os referidos acoplamentos serão aplicados a um exemplo constituído de um reator sem saturação alimentado por uma fonte de tensão senoidal e uma ponte retificadora de meia onda. Os resultados numéricos serão comparados com resultados analíticos e resultados do HSpice.
Title in English
Wear coupling of semiconductors to the finite elements method.
Keywords in English
Finite elements method
Semiconductors
Wear coupling
Abstract in English
This work presents the weak/indirect coupling technique of a nonlinear diode model with the Finite Element Method. Two methods will be shown: 1. the diode will be modeled by a nonlinear equation and weakly coupled to the FEM package Olympos by using the Matlab; 2. the circuit containing the semiconductor is described by the circuit-analyzer computational program HSpice which is weakly coupled to Olympos. The management and the data transfer between both programs are accomplished by Matlab. Both models will be applied to a study-case presenting a linear inductor fed by a sinusoidal voltage source through a half-wave rectifier. Simulations results will be compared to those from the analytical and the HSpice resolutions.
 
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Publishing Date
2022-04-11
 
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