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Doctoral Thesis
DOI
10.11606/T.88.2001.tde-25042002-092742
Document
Author
Full name
Inacio Regiani
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 2001
Supervisor
Committee
Souza, Milton Ferreira de (President)
Bressiani, José Carlos
Hernandes, Antonio Carlos
Rodrigues, José de Anchieta
Tomasi, Roberto
Title in Portuguese
"Películas Espessas de Carbeto de Silício, SiC, sobre Mulita"
Keywords in Portuguese
Deposição química por Vapor (CVD)
mulita
SiC
terras raras
whiskers
Abstract in Portuguese
Filmes de carbeto de silício, SiC, cristalinos foram depositados sobre peças de mulita por meio da técnica de deposição química por vapor (CVD) a pressão atmosférica. As características da superfície do substrato determinam se o filme será denso ou poroso, enquanto a temperatura define a cristalinidade e a taxa de nucleação para formação do filme. Durante os procedimentos de preparação do substrato de mulita para a deposição do filme, observou-se o fenômeno da formação de whiskers de mulita quando adicionados 3%mol de terras raras a peça. O fenômeno de crescimento destes whiskers foi sistematicamente estudado para sua caracterização e compreensão do mecanismo de formação. A adição de terras raras promoveu um abaixamento na temperatura de mulitização e a formação de whiskers com uma composição cuja razão alumina / sílica é de 1,3, uma das mais baixas observadas.
Title in English
Silicon carbide, SiC, thick films over mullite.
Keywords in English
Chemical Vapor Deposition (CVD)
mullite
rare earth
SiC
whiskers
Abstract in English
Crystalline silicon carbide, SiC, films were deposited on mullite by atmospheric pressure chemical vapor deposition (CVD) method. The characteristic of substrate surface determinate if the film will be dense or porous, while the deposition temperature defines its crystalinity and nucleation rate in film formation. During the mullite substrate preparation process for film deposition, it was observed a whisker formation phenomenon when the piece was doped with 3%mol of rare earth. The growth phenomenon of these whiskers was studied systematically to its characterization and comprehension of its formation mechanism. The addiction of rare earth promote a reduction in mullitization temperature and the formation of whiskers with a composition that alumina / silica ration was 1.3, one of the lowest one ever observed.
 
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Publishing Date
2004-04-30
 
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