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Master's Dissertation
DOI
10.11606/D.76.2001.tde-11112013-162344
Document
Author
Full name
Rodrigo Migotto Seraide
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 2001
Supervisor
Committee
Hai, Guo Qiang (President)
Leão, Salviano de Araújo
Menezes, Jose Carlos Egues de
Title in Portuguese
Mobilidade eletrônica em poços quânticos parabólicos de AlGaAs
Keywords in Portuguese
Espalhamento
Impureza
Liga
Mobilidade eletrônica
Poço quântico
Abstract in Portuguese
Neste trabalho estudamos as estruturas e as mobilidades eletrônicas em um sistema quase-bidimensional de poços quânticos parabólicos de AlxGa1-xAs dopados. Obtemos as auto-energias, as funções de onda e os perfis dos potencias de confinamento efetivo no sistema, através das soluções numéricas das equações de Schrödinger e de Poisson de forma autoconsistente. Em particular, estudamos as mobilidades quânticas e de transporte nestes sistemas. Devido a ocupação de várias subbandas nestes sistemas, as contribuições dos espalhamentos inter-subbandas para as mobilidades têm a mesma importância que os espalhamentos intra-subbandas. Obtemos as mobilidades de cada subbanda devido aos espalhamentos por impurezas doadoras e aceitadoras ionizadas e por potencial de liga. Analisamos os efeitos das distribuições de doadores dopados, de aceitadores de fundo e do potencial de gate externo
Title in English
Electron mobility in wide parabolic quantum wells of AlGaAs
Keywords in English
Alloy
Electron mobility
Impurity
Quantum well
Scattering
Abstract in English
In this work we study the electronic structure and electron mobilities in doped wide parabolic quantum wells of AlxGa1-xAs. The subband energies, the wavefunctions, and the effective confining potential profile are obtained by studying selfconsistently the coupled Schrödinger and Poisson equations. Based on the numerical results of the electronic structure, we calculate the quantum and transport mobilities of the system. Usually several subbands are occupied in such systems and they are strongly coupled to each other, the intersubband interaction shows the same importance as the intrasubband one to the electronic transport. We study and analyze the electron mobility of each subband due to the ionized donor scattering and the alloy scattering. We also show the effect of ionized background acceptor impurity scattering
 
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RodrigoSeraideM.pdf (2.03 Mbytes)
Publishing Date
2013-11-18
 
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