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Doctoral Thesis
DOI
10.11606/T.54.1992.tde-06022014-104232
Document
Author
Full name
Artemis Marti Ceschin
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1992
Supervisor
Committee
Li, Maximo Siu (President)
Henriques, Andre Bohomoletz
Motisuke, Paulo
Nunes, Luiz Antonio de Oliveira
Shibli, Suhaila Maluf
Title in Portuguese
Crescimento e caracterização de heteroestruturas tensionadas de InxGa1-x-As/GaAs
Keywords in Portuguese
Caracterização
Crescimento
Heteroestruturas tensionadas
InxGa1-x-As/GaAs
Abstract in Portuguese
Utilizando a técnica de epitaxia por feixe molecular (MBE), crescemos heteroestruturas tensionadas de InxGa1-xAs sobre substratos de GaAs (100). A composição de In, a espessura para a transição 2D-3D e a espessura crítica (hc) foram determinadas através da análise "in situ" pelo RHEED. Os valores da hc e da espessura para a transição 2D- 3D foram observadas ser funções da composição do In e da temperatura do substrato. Um estudo do efeito da desorientação do substrato de GaAs (100) de alguns graus sobre as qualidades ópticas (PL) de poços quânticos simples e múltiplos de InxGa1-xAs/GaAs também foi realizado. Microscopia eletrônica por transmissão (TEM) foi utilizada para a verificação da qualidade das interfaces dos poços quânticos de InxGa1-x/GaAs. Algumas estruturas de dupla barreira (AlGaAs/GaAs/InAs/GaAs/AlGaAs) foram crescidas e caracterizadas opticamente (PL)
Title in English
Growth and characterization of stressed heterostructures of InxGa1-x-As/GaAs
Keywords in English
Characterization
Growth
Heterostructures
InxGa1-xAs/GaAs
Stressed
Abstract in English
InxGa1-xAs strained heterostructures were grown on GaAs (100) by Molecular Beam Epitaxy (MBE). Indium concentration (x), 2D-3D growth mode transition thickness and critical thickness (hc) were determined by "in situ" RHEED analysis. Hc and 2D-3D growth mode transition thickness values were verified to depend on In concentration and substrate temperature. The dependence of the InxGa1-xAs /GaAs simple and multiple quantum wells (SQW and MQW) PL optical quality on the GaAs (100) substrate misorientation was also studied. The SQW interfaces were investigated by Transmission Eletronic Microscopy (TEM). Some double-barrier structures (AlGaAs/GaAs/InAs/GaAs/AlGaAs was also grown and optically characterized
 
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Publishing Date
2014-02-19
 
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