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Master's Dissertation
DOI
10.11606/D.54.1987.tde-15042014-114554
Document
Author
Full name
Robson Ferreira
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1987
Supervisor
Committee
Ioriatti Júnior, Lidério Citrângulo (President)
Leite, Jose Roberto
Marques, Gilmar Eugenio
Title in Portuguese
Efeitos de tunelamento na energia de ligação de impurezas doadoras rasas em super-redes
Keywords in Portuguese
Energia de ligação de impurezas rasas
Super-redes
Abstract in Portuguese
Energias de ligação do estado fundamental de doadores rasos em super-redes são consideradas teoricamente com o auxílio de um procedimento variacional que leva em conta a mistura do contínuo de estados da minibanda à qual o mesmo está associado. Os cálculos são realizados para um grande número de parâmetros de super-rede e qualquer posição da impureza na mesma. É mostrado que a dependência da energia de ligação com os vários parâmetros envolvidos pode ser completamente explicada em termos de um modelo simples unidimensional (tight-binding) onde a largura da respectiva minibanda de condução e a energia de ligação no Limite de poço isolado são os únicos parâmetros relevantes. A extrema concordância quantitativa entre as energias de ligação derivadas deste modelo e as obtidas pelo método variacional mais rigoroso vem enfatizar o papel fundamental desempenhado pela largura de minibanda com o único parâmetro relevante ao se levar em conta os efeitos de tunelamento existentes nas super-redes.
Title in English
Tunneling effects in the binding energy of shallow impurities in GaAs superlattices
Keywords in English
Binding energy of shallow impurities
Superlattices
Abstract in English
A variational procedure which takes into account the mixing of a continuum of subband states has been used to investigate the binding energies of shallow donors in superlattices. The calculations where performed for a wide range of superlattices parameters and impurity positions. It is shown that the dependence of the binding energy upon the various superlattice parameters can be completely explained in terms of a simple onedimensional tight-binding model where the bandwidth of the respective conduction subband and the binding energy in the isolated quantum well are the only relevant parameters. The quantitative overall agreement between the binding energies derived from this model and those found variationally is excellent and emphasizes the fundamental role played by the bandwidth as the only relevant parameter accounting for the tunneling effects.
 
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RobsonFerreiraM.pdf (2.38 Mbytes)
Publishing Date
2014-04-16
 
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