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Doctoral Thesis
DOI
10.11606/T.43.2005.tde-12112013-095231
Document
Author
Full name
Angela Dayana Barra Barrera
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 2005
Supervisor
Committee
Santos, Antonio Domingues dos (President)
Fantini, Marcia Carvalho de Abreu
Garcia, Flavio
Lima, Luiz Carlos Sampaio
Missell, Frank Patrick
Title in Portuguese
Estudo do acoplamento de troca no sistema NiFe/FeMn e efeitos da irradiação iônica
Keywords in Portuguese
Fenômenos magnéticos
Magnetismo
Abstract in Portuguese
O objetivo do presente trabalho foi produzir e estudar magnética e estruturalmente filmes finos de Ni IND. 81 Fe IND. 19 Mn IND. 50. Os filmes foram produzidos através da técnica de DC magnetron sputtering. Iniciamos nosso estudo em filmes de Si/buffer/ Ni IND. 81 Fe IND. 19 (30nm)/Fe IND 50 Mn IND. 50 (15nm)/Ta(5nm), utilizando-se substratos de Si(100), Si(111) e buffer de Cu e Ta, a fim de determinar as melhores condições para a obtenção de bom acoplamento de exchange entre as bicamadas magnéticas. Em seguida estudamos a propriedades magnéticas de filmes em função da espessura das camadas magnéticas. As amostras produzidas para este estudo foram filmes de Si(100)/Cu(20nm)/ Ni IND. 81 Fe IND. 19 (t IND. FM nm)/ Fe IND. 50 Mn IND. 50(t IND AFM nm)/Ta(3nm), variando-se t IND. FM entre 5 e 53nm e mantendo fixa t IND. AFM em 10 nm e vice-versa. Finalmente estudamos o efeito das irradiações iônicas de He e Ne no acoplamento de exchange. Os filmes foram caracterizados utilizando-se as técnicas de magnetrometria de amostra vibrante, difração de raios-x, refletometria de raios-x, absorção de raios-x na borda do Mn e microscopia óptica de campo próximo (SNOM). Os resultados da caracterização magnética de todos os filmes de Si/buffer/NiFe/FeMn/Ta mostram que eles apresentam acoplamento de exchange logo após a sua obtenção por sputtering. Porém o acoplamento via troca precisa ser induzido através do procedimento field cooling nos filmes de Si/buffer/FeMn/NiFe//Ta. Os resultados das medidas de difração de raios x mostram que os filmes apresentam estrutura cristalina FCC e texturas cristalográficas (111) e (200) quando as camadas magnéticas são depositadas sobre Cu e uma única textura cristalográfica, a textura (111) quando elas são depositadas sobre Ta. Por outro lado, os resultados da caracterização magnética nos indicam que as amostras com buffer de Cu apresentam as melhores propriedades magnéticas alto valor de H IND. exc e baixa coercividade. A análise de EXAFS dos filmes com diferentes buffers nos indica que as amostras depositadas sobre Ta e diretamente sobre silício apresentam maior desordem na sua estrutura fina em relação às amostras depositadas sobre Cu. A caracterização magnética dos filmes irradiados ionicamente mostrou que o valor de Hexc dos filmes irradiados com diferentes doses de He a temperatura ambiente aumentou em comparação ao valor do campo de exchange das amostras antes das irradiações iônicas. Já nas amostras irradiadas com Ne o campo de exchange diminuiu drasticamente. A partir das medidas realizadas no microscópio óptico de varredura em campo próximo (SNOM), em diferentes regiões de amostras antes e depois de serem irradiadas ionicamente observamos que não há variações no valor do campo de exchange.
Title in English
Study of exchange coupling in the NiFe / FeMn system and effects of ion irradiation
Keywords in English
Magnetic phenomena
Magnetism
Abstract in English
The aim of the present work was to produce and to study magnetic and structural properties of Ni81Fe19/Fe50Mn50 thin films. These films were produced by DC magnetron sputtering. We began our study on Si/buffer/Ni81Fe19(30nm)/Fe50Mn50(15nm)/Ta(5nm) films, using Si(100) or Si(111) substrates and Cu or Ta buffer layer, in order to determine the best conditions for obtaining a good exchange coupling between magnetic bilayers. After that, we studied the magnetic properties of these films relative to magnetics layers thickness. The samples studied were Si(100)/Cu (20mn)/Ni81Fe19 (tFM mn)/Fe50Mn50 (tAFM nm)/Ta(3nm), with tFM varying between 5 to 53run, with fixed tAFM of 10mn, and vice versa, namely with fixed tFM and varying tAFM. Finally, we studied the effect of He and Ne ionic irradiation on the exchange-coupling interaction. The thin films were characterized by vibrating sample magnetometry, X-ray diffraction, X-ray reflectometry, X-ray absorption spectroscopy at the Mn K edge, and near field optical microscopy (SNOM). The magnetic characterization of all Si/buffer/NiFe/FeMn/Ta films shows that pristine films present exchange coupling. However, the exchange-coupling interaction needs to be inducing through field cooling procedure for Si/buffer/FeMn/NiFe/Ta films. X ray diffraction measurements show that these films presents FCC crystal structure, plus (111) and (200) crystal textures when the magnetic layers are deposited on Cu buffer layer, and only the (111) crystal texture when the layers are deposited on Ta. On other hand, the magnetic measurement point out that the Cu buffer samples presents the best magnetic properties with high values for Hexc and low values of coercive field. The EXAFS analysis of films with different buffers points out that samples deposited on Ta and directly on silicon present a larger local disorder than samples deposited on Cu. The magnetic measurements of the ionic irradiated films showed an increase of Hexc values for samples irradiated at room temperature with different He rates, compared with the same samples before irradiation. On the other hand, for Ne irradiated samples the exchange field decreased drastically. We observed irradiation no changes on the exchange field values from near field optical microscopy (SNOM) measurements at different areas of samples before and after ionic. These results point out that, even if we are characterizing very small areas of the samples, the exchange field represents the average behavior of the exchange interaction in these areas.
 
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Publishing Date
2013-12-17
 
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