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Master's Dissertation
DOI
10.11606/D.43.1997.tde-07032002-142147
Document
Author
Full name
Rogério Junqueira Prado
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 1997
Supervisor
Committee
Fantini, Marcia Carvalho de Abreu (President)
Craievich, Aldo Felix
Tessler, Leandro Russovski
Title in Portuguese
Propriedades químicas e morfológicas de filmes hidrogenados de carbeto de silício amorfo.
Keywords in Portuguese
carbeto de silicio
PECVD
raios X
saxs
Abstract in Portuguese
Nesta dissertação discorremos acerca do crescimento e caracterização de filmes finos de carbeto de silício amorfo hidrogenado (a-Si1-xCx:H), crescidos pelo método de deposição química de vapor assistida por plasma (PECVD) no regime de baixa densidade de potência a partir de misturas de silano e metano. Foram analisadas e correlacionadas as propriedades ópticas, morfológicas e composicionais de filmes depositados em diferentes condições de fluxo de silano e concentração de metano. Os resultados não apenas confirmaram dados anteriores obtidos em filmes de a-Si1-xCx:H similares, mas possibilitaram uma melhor compreensão das características deste material. Para a obtenção de um composto de alto gap, alto conteúdo de carbono, química e morfologicamente homogêneo é necessário utilizar baixos fluxos de silano e alta concentração de metano, condições de deposição conhecidas como regime de "plasma faminto por silano". Neste regime são crescidos filmes com Eg > 3 eV, x > 0,5, maior concentração de ligações Si-C, concentração de hidrogênio de 50 at.%, menor proporção de radicais CH3 e menor densidade de poros.
Title in English
Chemical and morphological properties of amorphous hydrogenated.
Keywords in English
silicon carbide
X-rays
Abstract in English
In this work we describe the growth and characterization of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) in the low power density regime from mixtures of silane and methane. The optical, morphological and compositional properties of films deposited under different silane flow and methane concentration were analyzed and correlated. The results not only confirmed previous data obtained on similar a-Si1-xCx:H films, but improved the comprehension of their characteristics. In order to obtain a compound with high optical gap, high carbon content, chemically and morphologically homogeneous, it is necessary to work with low silane flow and high methane concentration; deposition conditions known as "silane starving plasma" regime. In this regime, films with Eg > 3 eV, x > 0.5, higher concentration of Si-C bonds, hydrogen concentration of 50 at.%, smaller proportion of CH3 radicals and smaller density of pores are produced.
 
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Dissertacao.pdf (950.08 Kbytes)
Publishing Date
2002-06-18
 
WARNING: The material described below relates to works resulting from this thesis or dissertation. The contents of these works are the author's responsibility.
  • PRADO, R. J., et al. Distribution of Pores in a-Si1−xCx:H Thin Films [doi:10.1107/s0021889897001349]. Journal of Applied Crystallography [online], 1997, vol. 30, p. 659-663.
  • PRADO, R. J., et al. Distribution of Pores in a-Si1-xCxH Thin Films [doi:10.1107/S0021889897001349]. Journal of Applied Crystallography [online], 1997, vol. 30, n. 5, p. 659-663.
  • PEREYRA, I., et al. The carbon incorporation in PECVD a-Si1-xCx:H in the low power density regime. In 8th Brazilian Workshop on Semiconductor Physics, Águas de Lindóia, 1997. Brazilian Journal of Physics., 1997.
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