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Doctoral Thesis
DOI
10.11606/T.43.1991.tde-06082013-103439
Document
Author
Full name
Wagner Wilson Furtado
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 1991
Supervisor
Committee
Stojanoff, Vivian (President)
Andrade, Adnei Melges de
Blak, Ana Regina
Cusatis, Cesar
Fantini, Marcia Carvalho de Abreu
Title in Portuguese
Efeito do carbono na formação de defeitos em silício Czochralski
Keywords in Portuguese
Carbono
Espalhamento difuso.
Oxigênio
Silício-Cz
Abstract in Portuguese
Neste trabalho é estudado o efeito do carbono na formação de defeitos em silício Czochralski crescido na direção <100> em amostras submetidas a tratamentos térmicos variados. Medidas de espalhamento difuso de raios-X, espectroscopia de infravermelho, medidas de resistividade, topografia de raios-X e microscopia eletrônica de transmissão mostraram que os defeitos nas amostras "como crescidas" podem ser relacionados com os microdefeitos tipo B. Tratamento térmico a 450ºC mostrou a presença de vacâncias nas amostras com baixa concentração de carbono enquanto que nas amostras com alta concentração de carbono ocorre a inibição da formação dos doadores térmicos ("Thermal Donors - TD"). Os resultados confirmam os modelos de Newman e Mathiot para a geração dos TD. Para tratamento térmico a 650ºC o carbono promove a formação de Novos Doadores ("New Donors - ND"). Os resultados mostram que estes defeitos são de natureza predominante de vacância e concordam com os modelos de geração que envolvem átomos de oxigênio substitucional. Os doadores observados a 550ºC puderam ser relacionados aos Novos Doadores Térmicos ("New Thermal Donors - NTD") observados por Kamiura et al..
Title in English
Effect of carbon in the formation of defects in Czochralski silicon.
Keywords in English
Carbon
Cz-Silicon
diffuse scattering.
Oxygen
Abstract in English
Effect of carbon concentration upon defect formation in oxygen rich Czochralski grown <100> silicon has been investigated by combining various furnace thermal anneals. Diffuse X-ray scattering, infrared spectroscopy, resistivity, x-ray topography, and transmission electron microscopy have shown that defects in as-grown samples could be related to the B swirls. 450ºC anneals have shown the presence of vacancies in low carbon samples while high carbon concentration inhibited Thermal Donor (TD) formation. Our results confirm models by Newman and Mathiot for thermal donors generation. For 650ºC anneals carbon promotes New Donors (ND) formation. Our results show that these defects are mainly vacancy in nature and agrees with the substitutional oxygen models proposed for these donors. Donor formation was observed at 550ºC which could be related to New Thermal Donors (NTD) proposed by Kamiura et al..
 
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45731FURTADO.pdf (9.08 Mbytes)
Publishing Date
2013-08-06
 
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