ESTRUTURA ELETRONICA DE IMPUREZAS ISOLADAS DE BORO E DOS PARES DE IMPUREZAS BORO-SILICIO E METAL DE TRANSICAO-VACANCIA EM CRISTAL DE GaAs

Franca, Ecio Jose

doi:10.11606/T.43.2017.tde-06062017-150805

Home

Facilities

Doctoral Thesis

DOI

https://doi.org/10.11606/T.43.2017.tde-06062017-150805

Document

Doctoral Thesis

Author

Franca, Ecio Jose (Catálogo USP)

Full name

Ecio Jose Franca

E-mail

Institute/School/College

Instituto de Física

Knowledge Area

Solid-State Physics

Date of Defense

1996-02-23

Published

São Paulo, 1996

Supervisor

Assali, Lucy Vitoria Credidio (Catálogo USP)

Committee

Chacham, Hélio
Emmel, Paulo Daniel
Fazzio, Adalberto
Leite, Jose Roberto
Meneses, Eliermes Arraes

Title in Portuguese

ESTRUTURA ELETRONICA DE IMPUREZAS ISOLADAS DE BORO E DOS PARES DE IMPUREZAS BORO-SILICIO E METAL DE TRANSICAO-VACANCIA EM CRISTAL DE GaAs

Keywords in Portuguese

Circuitos eletrônicos
Estrutura eletrônica

Abstract in Portuguese

Apresentamos aqui resultados de propriedades eletrônicas relacionadas à defeitos complexos em GaAs. Os cálculos autoconsistentes da estrutura eletrônica foram feitos usando o método do espalhamento múltiplo X a junto com o modelo do aglomerado molecular e com os orbitais de superfície saturados com a esfera de Watson.

Title in English

Electron structure of boron-isolated impurities and pairs of boron-silicon and transition metal impurities - vacancy in 'GA'AS'

Keywords in English

Electron circuits
Electron structure

Abstract in English

We repor! resu/ts for e/ectronic properties related to complex defects in GaAs. The self-consistent-fie/d electronic structure ca/culations were performed by using the multiplescattering X a method within framework of Watson-sphere-terminated molecular cluster model. We have simulated, first, the electronic states of the 26-atom clusters: 26Td/1As (tetrahedral interstitial As centered cluster), 26Td/1Ga (tetrahedral interslitial Ga cenlered clusle!) and 26C3v (trigonal cluster centered in the middle of a Ga-As bond).

WARNING - Viewing this document is conditioned on your acceptance of the following terms of use:
This document is only for private use for research and teaching activities. Reproduction for commercial use is forbidden. This rights cover the whole data about this document as well as its contents. Any uses or copies of this document in whole or in part must include the author's name.

1996Franca.pdf (43.23 Mbytes)

Publishing Date

2017-06-06

Derived works

WARNING: The material described below relates to works resulting from this thesis or dissertation. The contents of these works are the author's responsibility.

França, Ecio J., and Assali, L V C. Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide [doi:10.4028/www.scientific.net/MSF.258-263.893]. Materials Science Forum [online], 1997, vol. 258-263, p. 893-898.