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Doctoral Thesis
DOI
10.11606/T.43.2017.tde-06062017-150805
Document
Author
Full name
Ecio Jose Franca
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 1996
Supervisor
Committee
Chacham, Hélio
Emmel, Paulo Daniel
Fazzio, Adalberto
Leite, Jose Roberto
Meneses, Eliermes Arraes
Title in Portuguese
ESTRUTURA ELETRONICA DE IMPUREZAS ISOLADAS DE BORO E DOS PARES DE IMPUREZAS BORO-SILICIO E METAL DE TRANSICAO-VACANCIA EM CRISTAL DE GaAs
Keywords in Portuguese
Circuitos eletrônicos
Estrutura eletrônica
Abstract in Portuguese
Apresentamos aqui resultados de propriedades eletrônicas relacionadas à defeitos complexos em GaAs. Os cálculos autoconsistentes da estrutura eletrônica foram feitos usando o método do espalhamento múltiplo X a junto com o modelo do aglomerado molecular e com os orbitais de superfície saturados com a esfera de Watson.
Title in English
Electron structure of boron-isolated impurities and pairs of boron-silicon and transition metal impurities - vacancy in 'GA'AS'
Keywords in English
Electron circuits
Electron structure
Abstract in English
We repor! resu/ts for e/ectronic properties related to complex defects in GaAs. The self-consistent-fie/d electronic structure ca/culations were performed by using the multiplescattering X a method within framework of Watson-sphere-terminated molecular cluster model. We have simulated, first, the electronic states of the 26-atom clusters: 26Td/1As (tetrahedral interstitial As centered cluster), 26Td/1Ga (tetrahedral interslitial Ga cenlered clusle!) and 26C3v (trigonal cluster centered in the middle of a Ga-As bond).
 
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1996Franca.pdf (43.23 Mbytes)
Publishing Date
2017-06-06
 
WARNING: The material described below relates to works resulting from this thesis or dissertation. The contents of these works are the author's responsibility.
  • França, Ecio J., and Assali, L V C. Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide [doi:10.4028/www.scientific.net/MSF.258-263.893]. Materials Science Forum [online], 1997, vol. 258-263, p. 893-898.
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