• JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
 
  Bookmark and Share
 
 
Master's Dissertation
DOI
https://doi.org/10.11606/D.3.1990.tde-24052022-082844
Document
Author
Full name
Antonio Carlos Seabra
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 1990
Supervisor
Committee
Zuffo, Joao Antonio (President)
Qualifik, Paul
Swart, Jacobus Willibrordus
Title in Portuguese
Construção e caracterização de um equipamento de corrosão por plasma e sua aplicação na corrosão de SiO².
Keywords in Portuguese
Corrosão
Plasma
Abstract in Portuguese
Este trabalho apresenta uma metodologia para o projeto e construção de um equipamento de corrosão por plasma na configuração RIE. Um estudo detalhado da técnica de corrosão por plasma foi realizado para permitir a análise detalhada das características das configurações (equipamentos) existentes. Um estudo da corrosão a seco de SiO² crescido termicamente foi realizado utilizando-se cf/sub/4 e cf/sub/4+h/sub/2 como gases de processo para comprovar a viabilidade do equipamento construído. Este estudo foi aplicado na obtenção de espaçadores para estruturas salicide. Os resultados obtidos comprovam a adequação da metodologia de projeto empregada e a viabilidade do equipamento desenvolvido. Suas características encontram-se dentro da faixa encontrada em literatura para equipamentos de concepção semelhante.
Title in English
Design and characterization of a plasma etching system and its application to SiO2 etching.
Keywords in English
Etching
Plasma
Abstract in English
This work present a methodology for the design and construction of a RIE plasma etching equipment. A detailed study of the plasma etching technique was done to allow a detailed analysis of the known plasma etching configurations. A study of the plasma etching of thermal SiO2 in CF4 and CF4+H2 plasma was done to endorse the viability of the equipment built. This study was applied in a test-chip in order to get SALICIDEs spacers. The main topics of this work are: a) Study of the plasma etching technique and its configurations; b) Study of the main mechanics involved in the SiO2 plasma etching and the methodology for obtaining SALICIDEs spacers; c) Design of the gas admission system considering the reactant gas consumption during the plasma etching; d) Design of the vacuum system for CF4 carefully considering the losses involved; e) Characterization of the equipment built, with the following main results : i) Preliminary characterization of the equipment: - Effective pump speed in the chamber greater than (2,1±0,6) 1/s at a pressure of 13,3Pa of CF4; - Non-uniformity of etching in argon less than 5% in the range studied; - Self-bias potencial and plasma potencial ratio for argon greater than 3:1 in the range studied; - Electrode temperature during the process less than (30±1) °C in the range studied; ii) Characterization of the SiO2 plasma etching: - Etch rate of (1,17±0,03)nm/s for the operation point chosen in CF4 (13.3Pa, 100W, 21.4sccm); - Non-uniformity of etching less than 3% for the operation point chosen in CF4 (50mm wafers); - Selectivities of 7:1 and 25:1 for SiO2:Si and Si02:AZ1350J respectively (when using a CF4+22.5%H2 mixture at 13,3Pa, 200W and 21.4sccm total flow); - Degree of anisotropy dependant on the mask profile for CF4 processing and equal to 0.9 for CF4+22.5%H2 processing. The results shown endorse the designs methodology employed and the feasibility of the developed equipment.Its characteristics are in between those reported in literature for equipments of similar conception.
 
WARNING - Viewing this document is conditioned on your acceptance of the following terms of use:
This document is only for private use for research and teaching activities. Reproduction for commercial use is forbidden. This rights cover the whole data about this document as well as its contents. Any uses or copies of this document in whole or in part must include the author's name.
Publishing Date
2022-05-24
 
WARNING: Learn what derived works are clicking here.
All rights of the thesis/dissertation are from the authors
CeTI-SC/STI
Digital Library of Theses and Dissertations of USP. Copyright © 2001-2022. All rights reserved.