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Master's Dissertation
DOI
https://doi.org/10.11606/D.3.1996.tde-17052022-090901
Document
Author
Full name
Marco Isaías Alayo Chávez
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 1996
Supervisor
Committee
Pereyra, Inês (President)
Fantini, Marcia Carvalho de Abreu
Martino, João Antonio
Title in Portuguese
Deposição e caracterização de filmes de 'SI''O IND.2' crescidos pela técnica de pecvd a baixa temperatura
Keywords in Portuguese
Dióxido de silício
Estruturas MOS
Microeletrônica
Plasma CVD
Abstract in Portuguese
Reportamos os resultados da deposição e caracterização de películas de dióxido de silício obtidas pela técnica de deposição química a vapor assistida por plasma direto (DPECVD) a baixas temperaturas (< 400 'GRAUS'c). As películas foram crescidas pela decomposição apropriada de silano e óxido nitroso, variando essencialmente cinco parâmetros de deposição e suas propriedades ópticas e estruturais foram analisadas através da espectroscopia de absorção infravermelha e elipsometria. Para analisar também as propriedades de interface e obter a resistividade e constante dielétrica do material, foram fabricados capacitores MOS usando as películas depositadas por DPECVD como camada isolante, e suas curvasI-V e C-V para alta e baixa frequência foram medidas. Os resultados demonstram a viabilidade de obter películas finas de dióxido de silício por DPECVD sem traços (dentro dos limites de detecção da análise de FTIR) de ligações 'SI'o h, 'SI'n h ou 'SI'h, desde que adequadas condições de deposição sejam utilizadas. Em particular, mostramos que a técnica de `PECVD combinada com baixos fluxos de silano, baixa pressao de deposicao e alta densidade de potencia de RF e tão efetiva como as técnicas de alta diluição com hélio ou plasma remoto CVD em promover o crescimento de películas altamente estequiométricas, estruturalmente similares ao dióxido de silício crescido termicamente.
Title in English
Depossition and characterization of PECVD SiO2 films at low temperatures
Keywords in English
Microelectronics
MOS structures
Plasma enhanced chemical vapor deposition
Silicon dioxide
Abstract in English
In this work we report the results of the deposition and characterization of silicon dioxide films grown by the Direct Plasma Enhanced Chemical Vapor Deposition (DPECVD) technique at low temperature ( 400°C). The films were obtained by the decomposition of appropriate mixtures of silane and nitrous oxide, varying essentially five deposition parameters and their optical and structural properties were analyzed through Fourier Transform Infra-Red Spectroscopy and Ellipsometry. In order to analyze also the properties of the interface and to obtain the resistivity and dielectric constant of the material, MOS capacitors were fabricated using this DPECVD films as insulating layer, and their I-V characteristics and C-V curves at high frequency and low frequency were measured. The results demonstrate the feasibility of obtaining highly stoichiometric silicon dioxide thin films by DPECVD without traces (within the detection limits of the FTIR analysis) of SiOH, SiNH or SiH bonds, provided that suitable deposition conditions are utilized. In particular we show that DPECVD combined with very low silane flow, low deposition pressure and high rf power density is as effective as other techniques, like helium dilution or remote plasma CVD, in promoting the growth of highly stoichiometric films structurally similar to thermally grown silicon dioxide and having the added advantage of simplicity. The analysis of electric results permitted us to conclude that the deposited films present optimal values for the dielectric constant, electrical resistivity and breakdown voltage, very close to thermally grown material. However we also observed large values for the effective charge within the oxide as well as large amount of interface states in the Si/SiO2 interface, which produce high values of the threshold voltage and lateral inversion in MOS capacitors fabricated using this PECVD SiO2 as insulator layer on p-type single-crystalline silicon substrates.
 
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Publishing Date
2022-05-17
 
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