oram investigados 3 topicos relacionados ao estudo das propriedades estruturais de novos materiais, utilizando tecnicas de difracao (xrd) e espalhamento (saxs) de raios x: (a) filmes e heteroestruturas, amorfos, a base de a-'SI':h e a-'SI IND.1-X''C IND.X':h, crescidos por descarga luminescente (pecvd). (B) filmes finos eletrocromicos policristalinos de 'CO IND.X''O IND.Y' e 'NI''O IND.X' crescidos por rf-sputtering reativo e (c) compostos de 'BI'-'SR'-'CO'-o, isotopicos aos supercondutores 'BI'-'SR'-'CA'-'CU'-o, e fitas supercondutoras a base de 'BI'. Os filmes de a-'SI IND.X-1''C IND.X':h, crescidos por pecvd em condicoes destarving plasma, apresentam gap optico crescente com incorporacao de carbono, sao isolantes eletricos e resistentes a corrosao quimica. As medidas de caracterizacao quimica, morfologica e estrutural mostram que as condicoes de deposicao de starving plasma promovem o crescimento de um material mais homogeneo e com tendencia a ordem quimica do carbeto de silicio cristalino. Multicamadas formadas por a-'SI':h/a-'SI IND.1-X''C IND.X':h com interfaces mais abruptas foram obtidas com crescimento sobre uma camada buffer, tempos de plasma etching de hidrogenio de, pelo menos, 2min, e camadas de a-'SI IND.X''C IND.X':h crescidas com mais alta concentracao de c'H IND.4' na mistura gasosa e em condicoes de baixa potencia e baixo fluxo de silano (starving plasma)

We investigated three topics related to the study of structural properties of new materials, using techniques of diffraction (XRD) and scattering (SAXS) X-ray: (a) films and heterostructures, amorphous, base to-'SI ': he the -'SI IND.1-X''C IND.X ': h, grown by glow discharge (PECVD). (B) electrochromic thin films of polycrystalline 'CO IND.X''O IND.Y' and 'NI''O IND.X' grown by reactive rf-sputtering and (c) compounds of the 'BI' - 'SR'- 'CO' it, isotopic to superconductors' BI '-' SR '-' CA '-' CU' it, and superconducting tapes the basis of 'BI'. The films of the'SI-IND.X-1''C IND.X ': h, grown by PECVD conditions in destarving plasma, present growing optical gap with carbon incorporation, are electrical insulating and resistant to chemical corrosion. Measures to chemical characterization, morphological and structural show that the conditions of deposition of starving plasma promote the growth of a more homogeneous material, and with tendency to chemical order of crystalline silicon carbide. Multilayer formed by a-'SI ': h / a-'SI IND.1-X''C IND.X': h more abrupt interfaces were obtained by growth on the buffer layer, etching plasma times of hydrogen, at least 2 minutes, and layers of a-'SI IND.X''C IND.X ': h grown with highest concentration of c'H IND.4' in the gas mixture and conditions of low power and low flow silane (plasma starving)