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Master's Dissertation
DOI
https://doi.org/10.11606/D.97.2019.tde-28112019-162948
Document
Author
Full name
Thiago Trevizam Dorini
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
Lorena, 2019
Supervisor
Committee
Eleno, Luiz Tadeu Fernandes (President)
Ferreira, Flávio
Nunes, Carlos Angelo
Schön, Claudio Geraldo
Title in Portuguese
Estrutura de defeitos dos compostos T1 e T2 do sistema ternário Cr-Si-B
Keywords in Portuguese
αCr5Si3 T1
Ab initio
Cr-Si-B
Cr5B3 T2
Diagrama de fases
Difração de raios X
Radiação síncrotron
Abstract in Portuguese
Diversas aplicações atualmente requerem materiais que mantenham sua integridade estrutural por longos tempos de serviço e sob altas temperaturas. As superligas à base de níquel estão no seu limite de aplicação, pois não conseguem suportar temperaturas acima de 1150°C, sendo necessário buscar por substitutos. Os materiais mais promissores para aplicação principalmente no primeiro estágio de turbina aeronáutica são compósitos de Mo-Si-B, compósitos de SiC, compostos de Nb-Si, e ligas PGM (Platinum Group Metal). Para aumentar ainda mais a vida útil desses materiais, pode-se aplicar uma camada anti-corrosiva baseada em sistemas como Fe, Cr, Si e B. Assim, um dos sistemas a serem estudados é o Cr-Si-B, com o objetivo futuro de estudar todo o sistema multicomponente. De forma mais específica, existem duas fases muito importantes nesse sistema ternário, chamadas de T1 e T2, que foram pouco estudadas, principalmente com relação à sua estrutura de defeitos. Desta maneira, o presente trabalho teve como principal objetivo a determinação da estrutura de defeitos das fases αCr5Si3 (T1) e Cr5B3 (T2) através de experimentos de difração de raios X com radiação síncrotron e cálculos de primeiros principios, visando a implementação na base de dados do sistema ternário Cr-Si-B. Como resultado, obteve-se uma excelente concordância entre os experimentos e os cálculos, sendo que, para a fase T2, uma diferença significativa no χ2 e nas energias de formação foi verificada, chegando à conclusão que a solubilidade de silicio nesta fase ocorre preferencialmente na subrede 4a. Com relação à fase T1, não foi verificada uma diferença significativa tanto no χ2 quanto na entalpia de formação, sugerindo que o boro é solubilizado aleatoriamente, em pequenas concentrações, nas subredes 4a e 8h do silicio.
Title in English
On the defect structure of the T1 and T2 phase of the ternary system Cr-Si-B
Keywords in English
αCr5Si3 T1
Ab initio
Cr-Si-B
Cr5B3 T2
Phase Diagrams
Synchrotron radiation
X-ray diffraction
Abstract in English
Several applications currently require materials that maintain their structural integrity for long service times and under high temperatures. Nickel-based superalloys are at their limit of application, as they cannot withstand temperatures above 1150°C, requiring a search for substitutes. The most promising materials for such an application are Mo-Si-B composites, SiC composites, Nb-Si compounds, and PGM (Platinum Group Metal) alloys. In order to further increase the useful life of these materials, an anti-corrosive layer based on systems containing elements such as Fe, Cr, Si and B can be applied. Thus, one of the systems to be studied is Cr-Si-B, with the future goal of studying the entire multicomponent system. More specifically, there are two very important phases in this ternary system, called T1 and T2, about which there is a shortage of information in the literature, specially regarding their defect structure. Therefore, the main objective of the present work was to determine the defect. structure of the αCr5Si3 (T1) and Cr5B3 (T2) phases using X-ray diffraction experiments with synchrotron radiation and first principles calculations, aiming the implementation of a ternary system Cr-Si-B database. As a result, an excellent agreement was obtained between the experiments and the calculations. For the T2 phase a significant difference in the χ2 and in the enthalpies of formation was verified, arriving at the conclusion that the solubility of silicon occurs preferably in the 4a sublattice. With respect to the T1 phase, no significant difference was observed in both the χ2 and in the enthalpy of formation, suggesting that boron is randomly solubilized, in small concentrations, in the Si 4a and 8h sublattices.
 
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Publishing Date
2019-11-28
 
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