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Master's Dissertation
DOI
https://doi.org/10.11606/D.76.1998.tde-22042014-154005
Document
Author
Full name
Antonio Sergio dos Santos
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1998
Supervisor
Committee
Hornos, Jose Eduardo Martinho (President)
Ioriatti Júnior, Lidério Citrângulo
Machado, Luiz Eugenio
Title in Portuguese
O método adiabático hiperesférico para excitons ligados à impurezas doadoras em semicondutores
Keywords in Portuguese
Excitons
Método adiabático hiperesférico
Problema de três corpos
Abstract in Portuguese
Energias de ligação para excitons ligados por impurezas doadoras no ZnSe e CdS são calculadas pelo Método Adiabático Hiperesférico. Os acoplamentos não adiabáticos são incluídos na equação radial levando a valores de energias menores que os valores variacionais encontrados na literatura. Estados ressonantes, similares a estados autoionizantes em átomos de dois elétrons, são obtidos acima do primeiro limiar de ionização elétron-impureza.
Title in English
Hyperspherical adiabatic approach for excitons bound to ionized donors in semiconductors
Keywords in English
Excitons
Hyperspherical adiabatic approach
Three-body problem
Abstract in English
Binding energy for excitons trapped by impurities in ZnSe and CdS are calculated withing the hyperspherical adiabatic approach. The non adiabatic couplings are included in the radial equations leading to energies lower than the variational values available in the literature. Resonant states similar to autoionizing lines in atoms are predicted to lie above the first electron-impurity ionization threshold.
 
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Publishing Date
2014-04-24
 
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