• JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
 
  Bookmark and Share
 
 
Master's Dissertation
DOI
10.11606/D.54.1988.tde-27032015-145656
Document
Author
Full name
Artemis Marti Ceschin
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1988
Supervisor
Committee
Basso, Heitor Cury (President)
Li, Maximo Siu
Oliveira, Alfredo Gontijo de
Title in Portuguese
Sistema para epitaxia por feixe molecular
Keywords in Portuguese
Não disponível
Abstract in Portuguese
Este trabalho apresenta a instalação e operação de um sistema de Epitaxia por feixe molecular (EFM). Para tanto, foi necessário um estudo da literatura existente, a qual serviu também posteriormente para a comparação de alguns resultados obtidos. A condição de ultra-alto-vácuo (UHV) da ordem de 5.10-11mbar necessária para o crescimento de filmes de GaAs por EFM foi alcançada bombeando-se o sistema após a utilização de técnicas de limpeza de aço inox (eletropolimento) e desgasificação. As superfícies dos filmes de GaAs obtidos foram examinadas por microscopia ótica, e revelou a existência de: defeitos ovais, defeitos do tipo agulha, regiões de crescimento policristalino, regiões da superfície ricas em Gae interface substrato-filme. Além disso fizemos medidas da mobilidade Hall e alguns espectros de fotoluminescência.
Title in English
Not available
Keywords in English
Not available
Abstract in English
This work presents the installation and operation of a BEM system. To do so, it was necessary a study of the literature, which was also necessary to compare the results obtained here. The UHV (5.10-11mbar) necessary for the growth of the GaAs films by BEM has been reached after the utilization of electro polishing of stainless steel and outgassing of the system. The GaAs films obtained here had their surface analyzed by an optical microscope, which showed: oval defect, needles, polycrystalline growth, surface caused by Ga-rich evaporation condition and substrate-film interface. The characterization of the films was obtained by Hall effect and by photoluminescence
 
WARNING - Viewing this document is conditioned on your acceptance of the following terms of use:
This document is only for private use for research and teaching activities. Reproduction for commercial use is forbidden. This rights cover the whole data about this document as well as its contents. Any uses or copies of this document in whole or in part must include the author's name.
Publishing Date
2015-03-31
 
WARNING: Learn what derived works are clicking here.
All rights of the thesis/dissertation are from the authors
Centro de Informática de São Carlos
Digital Library of Theses and Dissertations of USP. Copyright © 2001-2019. All rights reserved.