• JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
  • JoomlaWorks Simple Image Rotator
 
  Bookmark and Share
 
 
Doctoral Thesis
DOI
https://doi.org/10.11606/T.54.1993.tde-09032009-150110
Document
Author
Full name
Airton Carlos Notari
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1993
Supervisor
Committee
Basmaji, Pierre (President)
Castro Neto, Jarbas Caiado de
Chitta, Valmir Antonio
Iikawa, Fernando
Motisuke, Paulo
Title in Portuguese
Estudo de incorporações de impurezas doadoras em estruturas semicondutoras III-V crescidas por epitaxia por feixes moleculares.
Keywords in Portuguese
Crescimento de semicondutores
Dopagem
EFM
Semicondutores III-V
Abstract in Portuguese
Amostras de Semicondutores III-V foram crescidas usando a técnica de Epitaxia por feixes Moleculares. As propriedades elétricas das estruturas de GaAs com dopagem planar com Silício foram investigadas, e também a saturação e a difusão do Silício nestas amostras. As propriedades ópticas e elétricas das estruturas dopadas planarmente com Selênio foram analisadas, usando as técnicas de Capacitância-voltagem e a de Tunelamento resonante. As propriedades elétricas dos poços quânticos a base de InGaAs/GaAs foram investigadas, em função da posição da impureza planarmente dopada com Silício.
Title in English
Study of incorporations of donor impurities in III-V semiconductor structures grown by molecular beam epitaxy.
Keywords in English
Doping
Growth of semiconductor
MBE
Semiconductors III-V
Abstract in English
III-V semiconductor samples were grown using the Molecular beam epitaxy technique, the electrical properties of the GaAs structures planar doped with silicon were investigated as well as the Silicon saturation and diffusion in these samles. The optcal and electrical properties of structures planar doped with Selenium were analyzed using the Capacitance Voltage and resonant Tunneling techniques. The electrical properties of InGaAs/ GaAs based quantum wells were investigated as a function of the planar doped with Silicon impurity position.
 
WARNING - Viewing this document is conditioned on your acceptance of the following terms of use:
This document is only for private use for research and teaching activities. Reproduction for commercial use is forbidden. This rights cover the whole data about this document as well as its contents. Any uses or copies of this document in whole or in part must include the author's name.
Publishing Date
2009-03-24
 
WARNING: Learn what derived works are clicking here.
All rights of the thesis/dissertation are from the authors
CeTI-SC/STI
Digital Library of Theses and Dissertations of USP. Copyright © 2001-2024. All rights reserved.