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Master's Dissertation
DOI
https://doi.org/10.11606/D.54.1976.tde-14102009-101407
Document
Author
Full name
Sergio Carlos Zilio
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1976
Supervisor
Title in Portuguese
Influência de centros de captura na relaxação dielétrica de cristais de Ki:M++.
Keywords in Portuguese
Corrente termo-estimulada
Defeitos
Halogenetos alcalinos
Relaxação dielétrica
Abstract in Portuguese
Encontrou-se que a relaxação dielétrica dos dipolos impureza-vacância em KI dopado com pequenas quantidades de KCl é extremamente diferente da relaxação dielétrica na matriz KI não contendo íons Cl‾.Os novos picos de relaxação, atribuídos à presença do Cl‾ na vizinhança imediata do íon divalente, tem um tempo de relaxação 103 vezes menor que o normal na temperatura ambiente.Foi proposto um modelo para o aprisionamento dos íons divalentes pelo Cl‾ e estudado a influência dos raios atômicos do divalente e do anion estranho neste processo de aprisionamento.
Title in English
The influence of capture centers on the dielectric relaxation of Ki:M ++.
Keywords in English
Alkalihalides
Defects
Dielectric relaxation
Thermo-stimulated current
Abstract in English
The dielectric relaxation due to I-V dipoles in KI doped with small amounts of KCl was found to be strongly different than in KI crystals not containing Cl‾.The new relaxation peak attributed to the presence of the Cl‾ in the close neighborhood of the divalent ion has a relax¬ation time 103 greater than the normal one.A model for the trapping of the divalent ions by the Cl‾ is proposed. The influence of atomic radius of the divalent and the impurity anion is discussed.
 
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Publishing Date
2009-10-23
 
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