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Master's Dissertation
DOI
10.11606/D.43.2018.tde-10082018-145516
Document
Author
Full name
Ahmad Al Zeidan
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 2017
Supervisor
Committee
Quivy, Alain Andre (President)
Fonseca, Fernando Josepetti
Pires, Mauricio Pamplona
Title in Portuguese
Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada
Keywords in Portuguese
Epitaxia por feixes moleculares.
Fotodetectores
InAs
infravermelho
Pontos quânticos
Submonocamada
Abstract in Portuguese
Nesse trabalho, foi investigado um novo tipo de fotodetector de radiação infravermelha baseado em pontos quânticos de submonocamada de InAs obtidos pela técnica de epitaxia por feixe molecular (MBE, Molecular Beam Epitaxy). Suas propriedades foram comparadas com as de fotodetectores de pontos quânticos de InAs convencionais obtidos pela mesma técnica de deposição, mas no modo de crescimento Stranski-Krastanov. Medidas de corrente de escuro, de ruído, de responsividade e de absorção mostraram que, dependendo da estrutura das amostras, os dispositivos com pontos quânticos de submonocamada podem ter um excelente desempenho.
Title in English
Infrared photodetectors based on submonolayer quantum dots.
Keywords in English
InAs
Infrared
Molecular beam epitaxy
Photodetectors
Quantum dots
Submonolayer
Abstract in English
In this work, we investigated a new type of infrared photodetector based on InAs sub-monolayer quantum dots grown by molecular beam epitaxy (MBE). Their properties were compared with those of photodetectors containing conventional InAs quantum dots obtained by the same deposition technique, but in the Stranski-Krastanov growth mode. Dark current, noise, responsivity and absorption measurements have shown that, depending on the structure of the samples, the devices with sub-monolayer quantum dots can perform very well.
 
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DissertZeidan.pdf (2.86 Mbytes)
Publishing Date
2018-08-10
 
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