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Master's Dissertation
DOI
https://doi.org/10.11606/D.43.2018.tde-08032018-092153
Document
Author
Full name
Amina Solano Lopes Ribeiro
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 2018
Supervisor
Committee
Hernandez, Felix Guillermo Gonzalez (President)
Sipahi, Guilherme Matos
Teodoro, Marcio Daldin
Title in Portuguese
Interações Rashba e Dresselhaus induzidas por deriva de spin
Keywords in Portuguese
deriva de spin.
interações de Rashba e Dresselhaus
spintrônica
Abstract in Portuguese
A spintrônica se beneficia do uso do grau de liberdade quântico que o elétron possui, o spin, para criar novos dispositivos eletrônicos exibindo novas funcionalidades. Para isso, foi estudado um gás de elétrons bidimensional confinado em um poço quântico de GaAs, dopado simetricamente com Si, contendo um sistema composto de duas subbandas no regime de espalhamento inter-subbanda forte. Utilizando-se técnicas de magnetotransporte, foi possível obter a mobilidade dos portadores de carga \mu = 2:2 10^6cm^2/Vs bem como a densidade total ns = 6:9 10^11/cm^2. A amostra foi caracterizada opticamente através da técnica de rotação de Kerr com resolução temporal e espacial utilizando-se um esquema de bombeio-prova. Após a polarização de spin ser criada opticamente, ao aplicar um campo elétrico no material é produzida deriva de spins. Através de um modelo de deriva que incorpora a interação de Rashba e de Dresselhaus, além dos coeficientes intersubbanda, a dependência do campo spin-órbita com a velocidade de deriva foi avaliada. Encontramos um valor para a interação de Rashba dado por \alpha = 0:7 meV Å e a influência do termo cúbico de Dresselhaus \beta_3 na deriva de spins, como consequência do aquecimento da amostra devido à aplicação de altas correntes elétricas, nos possibilitou correlacionar a interação de Dresselhaus com a velocidade de deriva, obtendo-se um comportamento linear.
Title in English
Rashba and Dresselhaus Interactions Induced by Spin Drift
Keywords in English
Rashba and Dresselhaus interactions
spin drift.
spintronics
Abstract in English
Spintronics takes advantage of the quantum spin degree of freedom to create new electronic devices with new functionalities. Therefore, it was studied a two-dimensional electron gas confined in a GaAs quantum well, symmetrically doped with Si, producing a two-subband system in the strong intersubband scattering regime. The sample was characterized using magnetotransport techniques, where we obtained the electron mobility as \mu = 2:2 10^6 cm^2/Vs and total charge densities as ns = 6:9 10^11/cm^2. The sample was optically characterized using time and space resolved Kerr rotation through a pump-probe scheme. Moreover, after optically creating a spin polarization, spin drift is produced by applying an electric field on the material. Using a drift model incorporating Rashba and Dresselhaus term and inter-subband spin-orbit couplings, the spin-orbit fields and drift velocity dependence were evaluated. We found a value for Rashba interaction given by \alpha = 0:7 meV Å and the influence of cubic Dresselhaus term \beta_3 in spin drift, as consequence of sample heating due to high electrical currents applied, allowing to correlate Dresselhaus interaction with drift velocity, obtaining a linear behaviour.
 
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Publishing Date
2018-03-08
 
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